Abstract
Two types of structures comprising porous silicon (por-Si) layers between metal electrodes were prepared, which possessed nonlinear (A type) and linear (B type) current-voltage characteristics. The exposure to microwave radiation leads to the appearance of an emf between electrodes. The B-type structures exhibit high voltage responsivity and can be used as microwave radiation sensors.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
A. G. Cullis, L. T. Canham, and P. D. J. Calcot, J. Appl. Phys. 82, 909 (1997).
L. A. Balagurov, Materialovedenie, No. 1, 50 (1998); No. 3, 23 (1998).
P. Bettotti, M. Cazzanelli, L. Dal Negro, et al., J. Phys.: Condens. Matter. 14, 8253 (2002).
H. Föll, M. Christophersen, J. Carstensen, et al., Mater. Sci. Eng. R 39, 93 (2002).
V. Lehmann, Electrochemistry of Silicon (Willey-VCH, Weinheim, 2002), p. 296.
T. W. Crowe, Int. J. Infrared Millim. Waves 10, 765 (1989).
M. Dagys, Ž. Kancleris, R. Simniškis, et al., in Proceedings of the 14th International Pulsed Power Conference, Dallas, 2003, pp. 189–192.
S. Ašmontas and A. Sužiedelis, Int. J. Infrared Millim. Waves 15, 525 (1994).
S. Ashmontas, Electrogradient Phenomena in Semiconductors, Ed. by Yu. Pozhela (Mosklas, Vilnius, 1984), p. 182 [in Russian].
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, and I. D. Yaroshetskiĭ, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 1371 (1993) [Semiconductors 27, 1078 (1993)].
A. V. Zherzdev, V. Kh. Kudoyarova, A. V. Medvedev, and G. K. Moroz, Pis’ma Zh. Tekh. Fiz. 19(23), 87 (1993) [Tech. Phys. Lett. 19, 771 (1993)].
L. A. Balagurov, S. C. Bayliss, D. G. Yarkin, et al., Solid-State Electron. 47, 65 (2003).
S. Lazarouk, P. Jaguiro, S. Kautsouba, et al., Appl. Phys. Lett. 68, 2108 (1996).
S. Ašmontas, J. Gradauskas, V. Petkun, et al., Lithuanian J. Phys. 43, 345 (2003).
Author information
Authors and Affiliations
Additional information
Original Russian Text © S. Ašmontas, J. Gradauskas, V. Zagadsky, J. Stupakova, A. Sužiedelis, E. Šatkovskis, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 14, pp. 8–14.
Rights and permissions
About this article
Cite this article
Ašmontas, S., Gradauskas, J., Zagadsky, V. et al. Microwave detectors based on porous silicon. Tech. Phys. Lett. 32, 603–605 (2006). https://doi.org/10.1134/S1063785006070169
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/S1063785006070169