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Mechanisms of current transfer and photosensitivity in Zn/CuInSe2 Schottky diodes

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Abstract

Photosensitive Schottky barriers have been obtained for the first time by electrolytic deposition of zinc onto p-type CuInSe2 crystals. The capacitance-voltage and current-voltage characteristics of these structures have been studied at liquid nitrogen temperature and in the interval from 238 to 330 K. For a direct bias voltage, the current transfer in the system studied is characterized by the Ohm law, with space-charge-limited current and thermionic emission. Reverse-biased structures also obey the Ohm law and simultaneously exhibit soft breakdown. The relative quantum efficiency spectrum of photocurrent in the Zn/CuInSe2 barriers has been measured.

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Authors and Affiliations

  1. Frantsevich Institute for Problems of Materials Science (Chernivtsy Department), National Academy of Sciences of Ukraine, Chernivtsy, Ukraine

    Z. D. Kovalyuk, O. N. Sydor & V. V. Netyaga

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  1. Z. D. Kovalyuk
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  2. O. N. Sydor
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  3. V. V. Netyaga
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Original Russian Text © Z. D. Kovalyuk, O.N. Sydor, V.V. Netyaga, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 10, pp. 88–94.

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Kovalyuk, Z.D., Sydor, O.N. & Netyaga, V.V. Mechanisms of current transfer and photosensitivity in Zn/CuInSe2 Schottky diodes. Tech. Phys. Lett. 32, 459–462 (2006). https://doi.org/10.1134/S1063785006050269

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  • DOI: https://doi.org/10.1134/S1063785006050269

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