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Optical and electrical properties of thin carbide-containing films on silicon

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Abstract

The optical and electrical properties of thin carbide-containing films grown using a new promising method on silicon wafers have been experimentally studied. The results of electron diffraction measurements, the current-voltage characteristics measured in the dark and under illumination, the photo emf as a function of the excitation level, and the photoresponse spectrum are presented. The proposed thin-film system is a promising material for optoelectronics.

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Authors and Affiliations

  1. Institute for Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia

    A. P. Belyaev, S. A. Kukushkin, A. V. Osipov & V. P. Rubets

  2. Central Materials Research Institute, St. Petersburg, Russia

    S. K. Gordeev & S. B. Korchagina

Authors
  1. A. P. Belyaev
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  2. S. A. Kukushkin
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  3. A. V. Osipov
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  4. V. P. Rubets
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  5. S. K. Gordeev
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  6. S. B. Korchagina
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Additional information

Original Russian Text © A.P. Belyaev, S.A. Kukushkin, A.V. Osipov, V.P. Rubets, S.K. Gordeev, S.B. Korchagina, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 10, pp. 1–6.

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Belyaev, A.P., Kukushkin, S.A., Osipov, A.V. et al. Optical and electrical properties of thin carbide-containing films on silicon. Tech. Phys. Lett. 32, 414–416 (2006). https://doi.org/10.1134/S1063785006050142

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  • DOI: https://doi.org/10.1134/S1063785006050142

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