Abstract
The formation of iron disilicide (β-FeSi2) nanoclusters as a result of solid-state epitaxy at T = 500–700°C and an iron coverage of 0.05–0.5 monolayer on a boron-modified Si(111)√3 × √3 R30° surface has been studied by scanning tunneling microscopy. It is established that the number density of β-FeSi2 nanoclusters on the Si(111) √3 × √3 R30°-B surface significantly exceeds the density of silicide clusters formed on the atomically clean Si(111) surface with a 7 × 7 reconstruction for the analogous iron coverages and annealing temperatures. At the same time, the density of point defects and clusters possessing metallic conductivity on the Si(111) √3 × √3 R30°-B surface is several orders of magnitude lower than on the Si(111)7 × 7 surface treated under identical conditions.
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Original Russian Text © M.V. Ivanchenko, E.A. Borisenko, V.G. Kotlyar, O.A. Utas, V.V. Ustinov, V.G. Lifshits, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 9, pp. 58–64.
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Ivanchenko, M.V., Borisenko, E.A., Kotlyar, V.G. et al. Increase in the density of β-FeSi2 nanoclusters on a Si(111) surface by means of Si(111) √3 × √3R30°-B reconstruction. Tech. Phys. Lett. 32, 396–398 (2006). https://doi.org/10.1134/S1063785006050099
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DOI: https://doi.org/10.1134/S1063785006050099