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Optical memory cells based on planar slit structures

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Abstract

An optical memory cells is designed based on electroluminescent planar slit structures with powdered phosphors exhibiting a photoresistive effect. The temperature dependence of the time of optical data storage is studied for the cells with various phosphors of the recombination emission type. An expression describing the kinetics of image restoration is obtained.

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References

  1. B. N. Denisov, E. M. Bibanina, V. A. Goryunov, and E. V. Nikishin, Pis’ma Zh. Tekh. Fiz. 26(11), 47 (2000) [Tech. Phys. Lett. 26, 470 (2000)].

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  2. B. N. Denisov, V. A. Goryunov, A. P. Korolev, and E. M. Bibanina, RF Patent No. 2175468, Byull. Izobret., No. 30 (2001).

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Original Russian Text © B.N. Denisov, E.M. Bibanina, V.I. Beglov, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 4, pp. 70–74.

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Denisov, B.N., Bibanina, E.M. & Beglov, V.I. Optical memory cells based on planar slit structures. Tech. Phys. Lett. 32, 171–173 (2006). https://doi.org/10.1134/S106378500602026X

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  • DOI: https://doi.org/10.1134/S106378500602026X

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