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Modification-scanning X-ray microscopy of semiconductor structures using Kumakhov optics

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Abstract

A modification variant of scanning X-ray microscopy using Kumakhov optics has been realized for the first time. Using the proposed device, radiation tests of pressure sensors based on silicon-on-sapphire structures were performed under laboratory conditions. The source of ionizing radiation in the new device is an X-ray tube with a middle-focus polycapillary Kumakhov lens.

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Authors and Affiliations

  1. Institute for Roentgen Optics, Moscow, Russia

    A. Yu. Romanov

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  1. A. Yu. Romanov
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Original Russian Text © A. Yu. Romanov, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 4, pp. 51–55.

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Romanov, A.Y. Modification-scanning X-ray microscopy of semiconductor structures using Kumakhov optics. Tech. Phys. Lett. 32, 161–163 (2006). https://doi.org/10.1134/S1063785006020234

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  • DOI: https://doi.org/10.1134/S1063785006020234

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