Abstract
The temperature dependences of the thermostimulated capacitance and the voltage dependences of the transconductance were measured for heterostructures based on InGaN Solid solutions. Based on these data, the energies of deep centers, which can participate in the recombination flux formation in these structures, were determined.
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Original Russian Text © A.S. Ambrozevich, S.A. Ambrozevich, N.S. Grushko, L.N. Potanakhina, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 4, pp. 16–23.
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Ambrozevich, A.S., Ambrozevich, S.A., Grushko, N.S. et al. Determining the energies of deep centers in heterostructures based on InGaN Solid solutions. Tech. Phys. Lett. 32, 146–148 (2006). https://doi.org/10.1134/S1063785006020180
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DOI: https://doi.org/10.1134/S1063785006020180