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Morphology and optical properties of titanium-doped porous silicon carbide layers

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Abstract

The effect of rapid thermal annealing (RTA) in oxygen on the properties of titanium-doped porous silicon carbide (por-SiC) layers has been studied. The data on the surface morphology and the photoluminescence (PL) spectra show that the high-temperature diffusion annealing is accompanied by the formation of titanium silicides, by an increase in the grain size of the material, and by the emergence of pores on the surface of the por-SiC-Ti sample. The results of PL measurements are consistent with data on the phase composition and the surface morphology of the samples. It is established that RTA leads to modification of the titanium-doped por-SiC structure.

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Authors and Affiliations

  1. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine

    Yu. Yu. Bacherikov, R. V. Konakova, O. S. Lytvyn & O. B. Okhrimenko

  2. Taganrog State University of Radio Engineering, Taganrog, Russia

    A. M. Svetlichnyi & N. N. Moskovchenko

Authors
  1. Yu. Yu. Bacherikov
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  2. R. V. Konakova
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  3. O. S. Lytvyn
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  4. O. B. Okhrimenko
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  5. A. M. Svetlichnyi
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  6. N. N. Moskovchenko
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Additional information

Original Russian Text © Yu.Yu. Bacherikov, R.V. Konakova, O.S. Lytvyn, O.B. Okhrimenko, A.M. Svetlichnyi, N.N. Moskovchenko, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 4, pp. 6–10.

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Bacherikov, Y.Y., Konakova, R.V., Lytvyn, O.S. et al. Morphology and optical properties of titanium-doped porous silicon carbide layers. Tech. Phys. Lett. 32, 140–142 (2006). https://doi.org/10.1134/S1063785006020167

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  • DOI: https://doi.org/10.1134/S1063785006020167

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