Abstract
A comparative study of the circular polarization degree dependences on external magnetic field was carried out in spin light-emitting diodes including semiconductor InGaAs/GaAs heterostructure and a magnetic CoPt contact and in control non-magnetic structures with an Au contact. In a weak magnetic field, the magnetic field dependence of electroluminescence circular polarization degree is similar to the magnetic field dependence of magnetization: it represents a hysteresis loop with saturation in a field of ~0.3 T. In a strong magnetic field, an additional linear contribution to the circular polarization degree is detected. This contribution is associated with the Zeeman splitting of energy levels. The magnitude of the linear contribution depends on the position of the quantum well relative to the ferromagnet/semiconductor interface. The obtained dependence is associated with the influence of the magnetic field of the inhomogeneously magnetized CoPt electrode on the spin relaxation time of carriers.
REFERENCES
M. Holub, P. Bhattacharya. J. Phys. D: Appl. Phys., 40, R179 (2007). https://doi.org/10.1088/0022-3727/40/11/R01
S. H. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffres, J.-M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. X. Yang, A. Hallal, M. Chshiev, T. Amand, H. F. Liu, D. P. Liu, X. F. Han, Z. G. Wang, Y. Lu. Phys. Rev. B, 90, 085310 (2014). https://doi.org/10.1103/PhysRevB.90.085310
L. Huang, H. Wu, P. Liu, X. M. Zhang, B. S. Tao, C. H. Wan, Y. Yan, X. F. Han. Appl. Phys. Lett., 113 (2), 222402 (2018). https://doi.org/10.1063/1.5052193
P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffres, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X.F. Han, Z. Wang, Y. Lu. Appl. Phys. Lett., 105, 012404. https://doi.org/10.1063/1.4887347
M. V. Dorokhin, M. V. Ved’, P. B. Demina, A. V. Zdoroveyshchev, A. V. Kudrin, A. V. Rykov, Yu. M. Kuznetsov. Phys. Solid State, 59 (11), 2155 (2017). https://doi.org/10.1134/S1063783417110087
A. V. Zdoroveyshchev, M. V. Dorokhin, P. B. Demina, A. V. Kudrin, O. V. Vikhrova, M. V. Ved’, Yu. A. Danilov, I. V. Erofeeva, R. N. Krjukov, D. E. Nikolichev. Semiconductors, 49 (12), 1601. https://doi.org/10.1134/S106378261512026X
N. Nagaosa, J. Sinova, S. Onoda, A. H. MacDonald, N. P. Ong. Rev. Mod. Phys., 82, 1539 (2010). https://doi.org/10.1103/RevModPhys.82.1539
M. V. Dorokhin, P. B. Demina, N. V. Baydus, Yu. A. Danilov, B. N. Zvonkov, M. M. Prokofieva. Poverkhnost. Rentgenovskie, sinhrotronnye i nejtronnye issledovaniya (in Russian) 5, 34 (2010) (in Russian).
R. Kotlyar, L. T. Reinecke, M. Bayer, A. Forchel. Phys. Rev. B, 63, 085310 (2001). https://doi.org/10.1103/PhysRevB.63.085310
B. Kowalski, P. Omling, B. K. Meyer, D. M. Hofmann, V. Harle, F. Scholz, P. Sobkowicz. Semicond. Sci. Tech., 11, 1416 (1996). https://doi.org/10.1088/0268-1242/11/10/011
L. K. Castelano, D. Ferreira Cesar, V. Lopez-Richard, G. E. Marques, O. D. D. Couto Jr., F. Iikawa, R. Hey, P. V. Santos. Phys. Rev. B, 84, 205332 (2011). https://doi.org/10.1103/PhysRevB.84.205332
Y. N. Drozdov, N. V. Baidus’, B. N. Zvonkov, M. N. Drozdov, O. I. Khrykin, V. I. Shashkin. Semicond., 37, 194 (2003). https://doi.org/10.1134/1.1548664
G. Salis, R. Wang, X. Jiang, R. M. Shelby, S. S. P. Parkin, S. R. Bank, J.S. Harris. Appl. Phys. Lett., 87, 262503 (2005). https://doi.org/10.1063/1.2149369
Opticheskaya orientatsiya, pod. red. B. P. Zakharcheni, F. Mayera (Nauka, L., 1989) (in Russian)
Funding
This work was supported financially by RSF (grant no. 21-79-20186).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflict of interest.
Additional information
Publisher’s Note.
Pleiades Publishing remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Dorokhin, M.V., Demina, P.B., Zdoroveyshchev, A.V. et al. Circularly Polarized Electroluminescence of InGaAs/GaAs/CoPt Spin Light Emitting Diodes Placed in a Strong and Weak Magnetic Field. Tech. Phys. 68 (Suppl 3), S418–S423 (2023). https://doi.org/10.1134/S1063784223900607
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063784223900607