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Degradation of InGaN/GaN Quantum Well UV LEDs Caused by Short-Term Exposure to Current

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Abstract

A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN/GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80–190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20%) in the external quantum efficiency. The most probable physical mechanisms explaining the changes in InGaN/GaN LEDs are presented and possible ways to slow down the aging of UV LEDs are outlined.

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  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. M. Ivanov & A. V. Klochkov

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Ivanov, A.M., Klochkov, A.V. Degradation of InGaN/GaN Quantum Well UV LEDs Caused by Short-Term Exposure to Current. Tech. Phys. 68, 428–435 (2023). https://doi.org/10.1134/S1063784223900085

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