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Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate

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Abstract

It has been studied the morphology of the surface of the semipolar gallium nitride layers synthesized on nano-pattemed Si(100) or Si(113) substrates with a V-shaped or U-shaped surface profile, respectively. The morphology of the surface of the semipolar layers indicates that the different height-to-width ratio of the GaN(11-22) and GaN(10-11) blocks is associated with a higher growth rate of the GAN(11-22) face than GaN(10-11) and with different growth rates of the semipolar and polar crystal faces during the nucleation of the layer on a nano-patterned substrate.

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ACKNOWLEDGMENTS

Authors would like to thank V.K. Smirnov for provision of nano-patterned Si(100) substrates.

Funding

The studies were partially funded by RFBR within the framework of scientific project no. 20-08-00096.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. N. Bessolov, E. V. Konenkova, T. A. Orlova & S. N. Rodin

  2. St. Petersburg Electrotechnical University LETI, 197022, St. Petersburg, Russia

    A. V. Solomnikova

Authors
  1. V. N. Bessolov
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  2. E. V. Konenkova
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  3. T. A. Orlova
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  4. S. N. Rodin
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  5. A. V. Solomnikova
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Correspondence to V. N. Bessolov.

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Bessolov, V.N., Konenkova, E.V., Orlova, T.A. et al. Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate. Tech. Phys. 68, 395–398 (2023). https://doi.org/10.1134/S1063784223900048

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