Abstract
The mechanical strength of various silicon wafers with a thickness of 100 μm has been studied, depending on the methods of their preparation and the modes of their subsequent grinding or polishing, including chemical–mechanical (HMP). The plates were loaded using the ring-to-ring method, the magnitude of stresses and deflection under the small ring was determined by the finite element method. For all the samples studied, the profiles and roughness parameters of the plates were obtained by stylus profilometry and atomic force microscopy (AFM) when scanning the surface along the baseline and over the area. A direct correlation was found between the strength of the plates and the characteristic parameters of their surface profile (the average values of the magnitude and period of fluctuations in the height of the irregularities).
Notes
It should be noted that in order to determine the small steps of changes in the height of the profile, it is necessary to carry out a larger number of measurements, as well as to consider the possible impact of various kinds of interference on them.
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ACKNOWLEDGMENTS
The authors express their gratitude to A.V. Ankudinov for his help in carrying out work on the characterization of the surface of samples of different groups using AFM microscopy, I.L. Shulpina for performing work on X-ray topography and VS. Levitsky for profilometry of the surface of the initial plates of a large area using the methods of stylus profilometry.
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Kozlov, V.A., Nikolaev, V.I., Shpeizman, V.V. et al. The Effect of Chemical–Mechanical Processing of Silicon Wafers on Their Surface Morphology and Strength. Tech. Phys. 68, 626–635 (2023). https://doi.org/10.1134/S1063784223080133
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DOI: https://doi.org/10.1134/S1063784223080133