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Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers

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Abstract

X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular beam epitaxy. It is shown that the grown heterostructures have a high crystal quality. The perpendicular lattice mismatch of the average crystal lattice constant of the InGaAs/InAlGaAs superlattice with respect to the crystal lattice constant of the InP substrate is estimated at ~ +0.01%. An analysis of the photoluminescence spectra made it possible to conclude that the contribution of Auger recombination is insignificant in the studied range of excitation power density. Studies of vertical-cavity surface-emitting lasers with an active region based on the InGaAs/InAlGaAs superlattice made it possible to estimate the gain coefficient at a level of 650 cm–1 for the standard logarithmic approximation of the dependence of the gain on the current density. The transparency current density of the laser was 400–630 A/cm2, which is comparable to the record low values for the case of highly strained InGaAs–GaAs and InGaAsN–GaAs quantum wells in the spectral ranges of 1300 nm, respectively.

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ACKNOWLEDGMENTS

A.M. Nadtochii acknowledges support from the Fundamental Research Program of the National Research University Higher School of Economics in optical measurements.

Funding

This study was supported financially by the Ministry of Science and Higher Education of the Russian Federation, research project no. 2019-1442. X-ray diffraction curves were analyzed using the equipment provided by the Materials Science and Diagnostics in Advanced Technologies common use center (Ioffe Institute, St. Petersburg).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    S. A. Blokhin, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov & N. A. Maleev

  2. ITMO University, 197101, St. Petersburg, Russia

    A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, V. V. Andryushkin, S. S. Rochas & V. E. Bougrov

  3. Connector Optics LLC, 194292, St. Petersburg, Russia

    L. Ya. Karachinsky, I. I. Novikov & A. Yu. Egorov

  4. Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. G. Kuzmenkov & V. M. Ustinov

  5. National Research University Higher School of Economics, 190121, St. Petersburg, Russia

    A. M. Nadtochiy

  6. Ioffe Institute, Common Use Center Materials Science and Diagnostics in Advanced Technologies, 194021, St. Petersburg, Russia

    V. N. Nevedomskiy

  7. St. Petersburg State Electrotechnical University “LETI”, 197022, St. Petersburg, Russia

    D. V. Denisov

  8. OAO OKB-Planeta, 173004, Veliky Novgorod, Russia

    K. O. Voropaev & I. O. Zhumaeva

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  1. S. A. Blokhin
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Blokhin, S.A., Babichev, A.V., Gladyshev, A.G. et al. Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers. Tech. Phys. 68, 549–557 (2023). https://doi.org/10.1134/S1063784223080078

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