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Metal–Semiconductor Transition Induced by Adsorbed Oxygen Molecules in Ytterbium Nanofilms

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Abstract

The effect of nondissociative adsorption of oxygen molecules on the electronic structure of ytterbium films with a thickness of 16 monolayers (6.08 nm) is investigated for the first time using scanning tunnelling spectroscopy. It is found that the adsorption of O2 molecules induces a metal–semiconductor transition in ytterbium. As a result of this transition, quantum states in nanofilms disappear, indicating a change in the type of coupling in the ytterbium crystal lattice, and a bandgap with a width of about 0.72 eV is opened.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    M. V. Kuz’min & M. A. Mittsev

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  1. M. V. Kuz’min
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  2. M. A. Mittsev
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Correspondence to M. V. Kuz’min.

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Translated by N. Wadhwa

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Kuz’min, M.V., Mittsev, M.A. Metal–Semiconductor Transition Induced by Adsorbed Oxygen Molecules in Ytterbium Nanofilms. Tech. Phys. 66, 987–991 (2021). https://doi.org/10.1134/S1063784221070070

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