Abstract
The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples.
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ACKNOWLEDGMENTS
This study was performed using the equipment of the Heterostructural Microwave Electronics and Physics of Wide Bandgap Semiconductors Center for Collective Use of National Research Nuclear University “Moscow Engineering Physics Institute.”
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Gusev, A.S., Kargin, N.I., Ryndya, S.M. et al. Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer. Tech. Phys. 66, 869–877 (2021). https://doi.org/10.1134/S1063784221060074
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DOI: https://doi.org/10.1134/S1063784221060074