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A Bipolar Transistor-Based High-Power Chaotic Oscillator with Selected Inertia

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Abstract

The feasibility of creating a high-power wideband source of chaotic microwave signals that is constructed around a single high-power bipolar transistor has been demonstrated for the first time. This has become possible after implementing a selected-inertia oscillator. Theoretical calculations supporting the idea of fabricating such an oscillator are presented. A hybrid integrated prototype of a selected-inertia chaotic oscillator that is based on a 2T982A-2 high-power transistor has been designed. The feasibility of generating chaotic microwave signals with a center frequency of 4.55 GHz and an overall power of 1.1 W has been proved. The effective width of the chaotic signal power spectrum equals 11% at a spectral characteristic ripple of 3 dB, the spectral density of noise oscillations is 2.2 × 10–3 W/MHz, and the e1fficiency is 15%.

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Funding

This study was conducted in the framework of a government order.

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Authors and Affiliations

  1. Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 141190, Fryazino, Moscow oblast, Russia

    S. V. Savel’ev & L. A. Morozova

Authors
  1. S. V. Savel’ev
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  2. L. A. Morozova
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Corresponding author

Correspondence to L. A. Morozova.

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The authors declare that they have no conflicts of interest.

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Translated by V. Isaakyan

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Savel’ev, S.V., Morozova, L.A. A Bipolar Transistor-Based High-Power Chaotic Oscillator with Selected Inertia. Tech. Phys. 65, 2056–2060 (2020). https://doi.org/10.1134/S1063784220120245

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  • DOI: https://doi.org/10.1134/S1063784220120245

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