Abstract
We consider problems associated with the reliability of high-power 4H-SiC Schottky diodes (SDs) during short-term electric overloads in the reverse direction (for diodes operating in the pulsed avalanche regime). In particular, we analyze the effect of nonuniformity of an avalanche breakdown over the diode area on the maximal avalanche energy (MAE) that can be dissipated by the diode prior to its secondary thermal breakdown. For estimating the uniformity of an avalanche breakdown, we propose that the measured pulse reverse current–voltage (I–V) characteristic of the diode be compared with the calculated I–V characteristic of an ideal quasi-one-dimensional diode. We measured reverse I–V characteristics of commercial 4H-SiC SDs: single avalanche current pulses with a duration of ~1 μs were passed through the diodes; during measurements, the pulse amplitudes grew to values for which a catastrophic failure of diodes occurred. It is shown that an increase in the differential resistance of diodes on the avalanche segment of the I–V curve and a decrease in the extrapolated breakdown voltage (as compared to values calculated for ideal diodes) can lead to a decrease in the MAE.
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REFERENCES
http://www.wolfspeed.com/power/products/sic-schottky-diodes
http://www.onsemi.com/pub/Collateral/FFSD10120A-D.pdf
T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications (Wiley–IEEE, 2014). https://doi.org/10.1002/9781118313534
T. Nakamura, M. Aketa, Y. Nakano, M. Sasagawa, and T. Otsuka, Proc. IEEE Energytech (May 29–31, 2012, Cleveland, OH, USA). https://doi.org/10.1109/EnergyTech2012.6304633
T. Basler, R. Rupp, R. Gerlach, B. Zippelius, and M. Draghici, PCIM Europe 2016: PCIM Europe Int. Exhibition and Conf. for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (May 10–12, 2016, Nuremberg, Germany), p. 181.
A. Gendron-Hansen, D. Sdrull, B. Odekirk, A. S. Kashyap, and L. Starr, Mater. Sci. Forum 924, 585 (2017).
A. Konstantinov, H. Pham, B. Lee, K. S. Park, B. Kang, F. Allerstam, and T. Neyer, Solid-State Electron. 148, 51 (2018). https://doi.org/10.1016/j.sse.2018.07.011
S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Wien, 1984). https://doi.org/10.1007/978-3-7091-8752-4
T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai, and N. Sano, Appl. Phys. Lett. 85 (8), 1380 (2004). https://doi.org/10.1063/1.1784520
M. Levinshtein, J. Kostamovaara, and S. Vainshtein, Sel. Top. Electron. Syst. 36, 224 (2005). https://doi.org/10.1142/5877
K. V. Vassilevski, K. Zekentes, A. V. Zorenko, and L. P. Romanov, IEEE Electron Device Lett. 21, 485 (2000). https://doi.org/10.1109/55.870609
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, and I. V. Grekhov, Semiconductors 51 (3), 374 (2017). https://doi.org/10.1134/S1063782617030095
media.digikey.com/pdf/Data Sheets/CREE Power/CSD02060.pdf
www.wolfspeed.com/media/downloads/55/C3D02060A.pdf
P. A. Ivanov, T. P. Samsonova, and A. S. Potapov, Semiconductors 52 (12), 1630 (2018). https://doi.org/10.1134/S1063782618120126
Funding
This study was supported by the Ministry of Education and Science of the Russian Federation in the framework of the complex project “Development of High Technology Production of Silicon and Silicon Carbide Articles for Microelectronics in Compact Metal–Polymer Casing Configurations of the SOT, SO, and QFN type” (contract no. 075-11-2019-035 from November 29, 2019) with a coproducer of the Ioffe Physical Technical Institute in the Research and Development Projects.
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Translated by N. Wadhwa
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Ivanov, P.A., Potapov, A.S., Lebedeva, N.M. et al. Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects. Tech. Phys. 65, 2041–2046 (2020). https://doi.org/10.1134/S1063784220120117
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DOI: https://doi.org/10.1134/S1063784220120117