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Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures

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Abstract

Theoretical and experimental data are reported for the distribution of hydrogen in silicon in SiO2–Si structures after the implantation of hydrogen. Hydrogen is implanted under conditions used in preparing silicon-on-insulator structures by the hydrogen transfer technology. A technique for quantitative estimation of implanted hydrogen high concentrations in silicon using secondary-ion mass spectrometry is suggested. It includes the quantitative calibration of the hydrogen atom concentration and normalization of the depth of analysis from sputtering time. Data for the implanted hydrogen depth distribution in silicon and in Si–SiO2 structures are presented. The lateral uniformity and temporal stability of implanted structures have been monitored.

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Authors and Affiliations

  1. Lobachevsky National Research State University, 603600, Nizhny Novgorod, Russia

    N. D. Abrosimova & S. V. Obolensky

  2. Institute of Physics of Microstructures, Russian Academy of Sciences, 607680, Nizhny Novgorod, Russia

    M. N. Drozdov

  3. Research Radiophysical Institute, Lobachevsky National Research State University, 603950, Nizhny Novgorod, Russia

    S. V. Obolensky

Authors
  1. N. D. Abrosimova
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  2. M. N. Drozdov
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  3. S. V. Obolensky
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Corresponding author

Correspondence to N. D. Abrosimova.

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The authors declare that they have no conflicts of interest.

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Translated by V. Isaakyan

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Abrosimova, N.D., Drozdov, M.N. & Obolensky, S.V. Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures. Tech. Phys. 65, 1767–1770 (2020). https://doi.org/10.1134/S106378422011002X

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  • DOI: https://doi.org/10.1134/S106378422011002X

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