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Analysis of Surface Morphology and Chemical Composition of Silicon Implanted with Copper Ions

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Abstract

We report on the results of analysis of the structure and chemical composition of the surface of c-Si single crystal substrates implanted with Cu+ ions with energy of 40 keV and doses in a range of 3.1 × 1015–1.25 × 1017 ions/cm2 for a current density of 8 μA/cm2 in the ion beam. It has been established using scanning electron microscopy and probe microscopy combined with X-ray photoelectron and Auger spectroscopy that at the initial stage, the implantation with Cu+ ions to a dose of 6.25 × 1016 ions/cm2 induces the formation of Cu nanoparticles with an average size of 10 nm in the Si surface layer. Upon a further increase in the implantation dose, beginning with 1.25 × 1017 ions/cm2 and higher, the nucleation of the η phase of copper silicide (η-Cu3Si) is observed. This is due to heating of the surface layer of the Si substrate during its irradiation to a temperature facilitating the formation of the η-Cu3Si phase.

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ACKNOWLEDGMENTS

XPS and AES measurements of the samples were performed on the equipment of PCR Federal Center of Shared Facilities of Kazan Federal University. A.I. Gumarov and L.R. Tagirov thank the Program of Competitive Growth of Kazan Federal University for support of their research work.

Funding

This study was supported by the Russian Science Foundation, project no. 17-12-01176, “Formation of Porous Layers of Silicon and Germanium with Metal Nanoparticles by the Ion Implantation Method.”

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Authors and Affiliations

  1. Institute of Physics, Kazan Federal University, 420008, Kazan, Russia

    V. V. Vorob’ev, A. I. Gumarov, L. R. Tagirov & A. M. Rogov

  2. Zavoisky Physical Technical Institute, Federal Research Center Kazan Scientific Center, Russian Academy of Sciences, 4200029, Kazan, Russia

    V. V. Vorob’ev, A. I. Gumarov, L. R. Tagirov, A. M. Rogov, V. I. Nuzhdin, V. F. Valeev & A. L. Stepanov

Authors
  1. V. V. Vorob’ev
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  2. A. I. Gumarov
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  3. L. R. Tagirov
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  4. A. M. Rogov
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  5. V. I. Nuzhdin
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  6. V. F. Valeev
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  7. A. L. Stepanov
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Correspondence to A. I. Gumarov.

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The authors declare that they have no conflicts of interest.

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Translated by N. Wadhwa

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Vorob’ev, V.V., Gumarov, A.I., Tagirov, L.R. et al. Analysis of Surface Morphology and Chemical Composition of Silicon Implanted with Copper Ions. Tech. Phys. 65, 1643–1651 (2020). https://doi.org/10.1134/S1063784220100242

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