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Determination of Electrophysical Parameters of a Semiconductor from Measurements of the Microwave Spectrum of Coaxial Probe Impedance

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Abstract

We propose a method for determining electrophysical characteristics (free charge carrier concentration, mobility, and conductivity) of semiconductors from the results of measurements of the microwave spectrum of the impedance of a coaxial probe as a function of applied constant voltage U. The sought parameters have been determined by solving the corresponding inverse problem using the theory of a near-field antenna that was developed earlier. We have developed a computer program that seeks the solution by minimization of the multiparametric residual function in accordance with the Nelder–Mead algorithm. The precision of the method has been analyzed from the results of simulation in which the impedance was calculated preliminarily considering resultant concentration profile n(x, U) of the depleted layer in the vicinity of the metal–semiconductor contact. The possibility of diagnostics with a micrometer lateral resolution has been demonstrated.

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REFERENCES

  1. N. V. Vostokov and V. I. Shashkin, IEEE Trans. Electron Devices 64, 109 (2017).

    Article  ADS  Google Scholar 

  2. A. N. Reznik, N. V. Vostokov, N. K. Vdovicheva, S. A. Korolyov, and V. I. Shashkin, J. Appl. Phys. 122, 244505 (2017).

    Article  ADS  Google Scholar 

  3. N. V. Vostokov, E. A. Koblov, S. A. Korolyov, M. V. Revin, V. I. Shashkin, IEEE Trans. Electron Devices 65, 1327 (2018).

    Article  ADS  Google Scholar 

  4. A. Imtiaz, T. Baldwin, H. T. Nembach, T. M. Wallis, and P. Kabos, Appl. Phys. Lett. 90, 23105 (2007).

    Article  Google Scholar 

  5. K. Laji, W. Kundhikanjana, M. A. Kelly, and Z.-X. Shen, Appl. Nanosci. 1, 13 (2011).

    Article  ADS  Google Scholar 

  6. A. N. Reznik and S. A. Korolyov, J. Appl. Phys. 119, 094504 (2016).

    Article  ADS  Google Scholar 

  7. S. A. Korolyov and A. N. Reznik, Rev. Sci. Instrum. 89, 023706 (2018).

    Article  ADS  Google Scholar 

  8. F. Buersgens, R. Kersting, and H.-T. Chen, Appl. Phys. Lett. 88, 112115 (2006).

    Article  ADS  Google Scholar 

  9. V. N. Trukhin, A. O. Golubok, A. V. Lyutetsky, B.  A.  Matveyev, N. A. Pikhtin, L. L. Samoilov, I. D. Sapozhnikov, I. S. Tarasov, M. L. Fel’shtyn, and D. P. Khor’kov, Radiophys. Quantum Electron. 54, 577 (2011).

    Article  ADS  Google Scholar 

  10. H. P. Huber, I. Humer, M. Hochleitner, M. Fenner, et al., J. Appl. Phys. 111, 014301 (2012).

    Article  ADS  Google Scholar 

  11. O. Amster, F. Stanke, S. Friedman, Y. Yang, St. J. Dixon-Warren, and B. Drevniok, Microelectron. Reliab. 76–77, 214 (2017).

  12. S. Hommel, N. Killat, A. Altes, T. Schveinboeck, and F. Kreupl, Microelectron. Reliab. 76–77, 218 (2017).

  13. V. L. Bonch-Bruevich and S. G. Kalashnikov, Semiconductor Physics (Mir, Moscow, 1977).

  14. J. A. Nelder and R. Mead, Comput. J. 7, 308 (1965).

    Article  MathSciNet  Google Scholar 

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Funding

This study was supported by the Russian Foundation for Basic Research (project no. 18-02-00914).

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    A. N. Reznik & N. K. Vdovicheva

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  1. A. N. Reznik
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  2. N. K. Vdovicheva
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Correspondence to A. N. Reznik.

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Translated by N. Wadhwa

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Reznik, A.N., Vdovicheva, N.K. Determination of Electrophysical Parameters of a Semiconductor from Measurements of the Microwave Spectrum of Coaxial Probe Impedance. Tech. Phys. 64, 1722–1727 (2019). https://doi.org/10.1134/S1063784219110240

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  • DOI: https://doi.org/10.1134/S1063784219110240

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