Abstract
The C–V characteristic of the lateral source–substrate junction in a metal–nitride–oxide–semiconductor transistor has been simulated. With a certain voltage across the junction that depends on the dopant concentration in the substrate, a local trapped charge embedded in the nitride layer causes an anomalous rise or fall of the junction capacitance. Such a capacitance variation is associated with charge carrier redistribution in the near-surface region of the substrate when the trapped charge is embedded. This feature of the C–V characteristic can be used to detect a local charge embedded in the insulating layer of a field-effect transistor.
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Funding
This study was financially supported by the Ministry of Innovation Development of the Republic of Uzbekistan, grant no. OT-F2-67.
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Translated by V. Isaakyan
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Atamuratova, Z.A., Yusupov, A., Khalikberdiev, B.O. et al. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer. Tech. Phys. 64, 1006–1009 (2019). https://doi.org/10.1134/S1063784219070053
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DOI: https://doi.org/10.1134/S1063784219070053