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Conductivity Inversion in Thin n-InSe Films under Laser Irradiation

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Abstract

Conductivity inversion in thin n-InSe films under intense pulsed laser irradiation was obser. A p–n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.

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Authors and Affiliations

  1. Baku State University, AZ 1148, Baku, Republic of Azerbaijan

    A. G. Kyazym-zade, V. M. Salmanov, A. G. Guseinov, R. M. Mamedov, Z. A. Agamaliev & F. M. Akhmedova

  2. Azerbaijan State Oil and Industry University, AZ 1010, Baku, Republic of Azerbaijan

    A. A. Salmanova

Authors
  1. A. G. Kyazym-zade
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  2. V. M. Salmanov
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  3. A. G. Guseinov
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  4. R. M. Mamedov
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  5. Z. A. Agamaliev
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  6. A. A. Salmanova
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  7. F. M. Akhmedova
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Correspondence to V. M. Salmanov.

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Translated by D. Safin

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Kyazym-zade, A.G., Salmanov, V.M., Guseinov, A.G. et al. Conductivity Inversion in Thin n-InSe Films under Laser Irradiation. Tech. Phys. 64, 555–558 (2019). https://doi.org/10.1134/S1063784219040145

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  • DOI: https://doi.org/10.1134/S1063784219040145

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