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Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation

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Abstract

Low-energy (E = 30 keV) Ag+ ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 1015 to 1.5 × 1017 ions cm–2 and an ion beam current density varying from 2 to 15 μA/cm2. The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Si experiences amorphization. It has been found that when the implantation dose is in excess of the threshold value (~3.1 × 1015 ions cm–2), Ag nanoparticles uniformly distributed over the Si surface arise in the irradiated Si layer. At a dose exceeding 1017 ions cm–2, a porous Si structure is observed. In this case, the Ag nanoparticle size distribution becomes bimodal with coarse particles localized at the walls of Si pores.

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REFERENCES

  1. A. Yu. Panarin, S. N. Terekhov, K. I. Kholostov, and V. P. Bondarenko, Appl. Surf. Sci. 256, 6969 (2010).

    Article  ADS  Google Scholar 

  2. Y.-C. Maggie Liou, J.-Y. Chen, and J. Yang, Appl. Spectrosc. 68, 172 (2014).

    Article  ADS  Google Scholar 

  3. V. V. Kozlovskii, V. A. Kozlov, and V. N. Lomasov, Semiconductors 34, 123 (2000).

    Article  ADS  Google Scholar 

  4. A. A. Ishchenko, G. V. Fetisov, and L. A. Aslanov, Nanosilicon: Properties, Production, Applications, and Analysis and Examination Techniques (Fizmatlit, Moscow, 2011).

    Google Scholar 

  5. G. F. Cerofolini, L. Meda, R. Balboni, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, M. Anderle, and R. Canteri, Phys. Rev. 46, 2061 (1992).

    Article  ADS  Google Scholar 

  6. H. J. Stein, S. M. Myers, and D. M. Follstaedt, J. Appl. Phys. 73, 2755 (1993).

    Article  ADS  Google Scholar 

  7. V. F. Reutov and A. S. Sokhatskii, Tech. Phys. 48, 68 (2003).

    Article  Google Scholar 

  8. M. Wittmer, J. Roth, P. Revesz, and J. M. Mayer, J. Appl. Phys. 49, 5207 (1978).

    Article  ADS  Google Scholar 

  9. P. Revesz, M. Wittmer, J. Roth, and J. M. Mayer, J. Appl. Phys. 49, 5199 (1978).

    Article  ADS  Google Scholar 

  10. M. F. Galyautdinov, N. V. Kurbatova, E. Yu. Buinova, E. I. Shtyrkov, and A. A. Bukharaev, Semiconductors 31, 970 (1997).

    Article  ADS  Google Scholar 

  11. P. K. Sadovskii, A. R. Chelyadinskii, V. B. Odzhaev, M. I. Tarasik, A. S. Turtsevich, and Yu. B. Vasiliev, Phys. Solid State 55, 1156 (2013).

    Article  ADS  Google Scholar 

  12. T. S. Amran, M. R. Hashim, N. K. Al-Obaidi, H. Yazid, and R. Adnan, Nanoscale Res. Lett. 8, 35 (2013).

    Article  ADS  Google Scholar 

  13. M. Wang, X. Wang, and S. Ghoshal, Micro Nano Lett. 8, 465 (2013).

    Article  Google Scholar 

  14. Y. Wang, Y. P. Liu, H. L. Liang, Z. X. Mei, and X. L. Du, Phys. Chem. Chem. Phys. 12, 2345 (2013).

    Article  Google Scholar 

  15. U. Kreibig and M. Vollmer, Optical Properties of Metal Clusters (Springer, Berlin, 1995), p. 468.

    Book  Google Scholar 

  16. A. L. Stepanov, Photonic Media with Nanoparticles Synthesized by Ion Implantation (Lambert Academic, 2014).

    Google Scholar 

  17. H. A. Atwater and A. Polman, Nat. Mater. 9, 205 (2010).

    Article  ADS  Google Scholar 

  18. A. L. Stepanov, V. V. Vorobev, V. I. Nuzhdin, V. F. Valeev, and Yu. N. Osin, J. Appl. Spectrosc. 84, 785 (2017).

    Article  ADS  Google Scholar 

  19. M. W. Knight, H. Sobhani, P. Nordlander, and N. J. Halas, Science 332, 702 (2011).

    Article  ADS  Google Scholar 

  20. Yu. G. Galyametdinov, R. R. Shamilov, and A. L. Stepanov, Russ. Chem. Bull. 65, 2773 (2016).

    Article  Google Scholar 

  21. V. V. Vorob’ev, A. M. Rogov, Yu. N. Osin, N. N. Brandt, V. I. Nuzhdin, V. F. Valeev, and A. L. Stepanov, Opt. Spectrosc. 124, 649 (2018).

    Article  ADS  Google Scholar 

  22. A. L. Stepanov, A. A. Trifonov, Y. N. Osin, V. F. Valeev, and V. I. Nuzhdin, Optoelectron. Adv. Mater., Rapid Commun. 7, 692 (2016).

    Google Scholar 

  23. A. L. Stepanov, Yu. N. Osin, A. A. Trifonov, V. F. Valeev, and V. I. Nuzhdin, Nanotechnol. Russ. 9, 163 (2014).

    Article  Google Scholar 

  24. Electron Backscatter Diffraction in Materials Science, Ed. by A. J. Schwartz, M. Kumar, B. L. Adams, and D. P. Field (Springer, 2009).

    Google Scholar 

  25. Scanning Microscopy for Nanotechnology: Techniques and Applications, Ed. by W. Zhou and Z. L. Wang (Springer, New York, 2007).

    Google Scholar 

  26. V. V. Bazarov, V. I. Nuzhdin, V. F. Valeev, V. V. Vorob’ev, Yu. N. Osin, and A. L. Stepanov, J. Appl. Spectrosc. 83, 47 (2016).

    Article  ADS  Google Scholar 

  27. V. M. Glazov and V. S. Zemskov, Physical and Chemical Foundations of Doping of Semiconductors (Nauka, Moscow, 1967).

    Google Scholar 

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ACKNOWLEDGMENTS

This study was supported by the Russian Science Foundation, project no. 17-12-01176.

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Authors and Affiliations

  1. Interdisciplinary Center for Analytical Microscopy, Kazan Federal University, 420021 Tatarstan,, Kazan, Russia

    V. V. Vorob’ev, A. M. Rogov, Yu. N. Osin & A. L. Stepanov

  2. Zavoiskii Physical Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, 420029 Tatarstan,, Kazan, Russia

    V. I. Nuzhdin, V. F. Valeev & A. L. Stepanov

  3. National University of Science and Technology MISIS, 119049, Moscow, Russia

    K. B. Eidel’man & N. Yu. Tabachkova

  4. Pacific National University, 680035, Khabarovsk, Russia

    M. A. Ermakov

  5. Kazan National Research Technological University, 420015 Tatarstan,, Kazan, Russia

    A. L. Stepanov

Authors
  1. V. V. Vorob’ev
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  2. A. M. Rogov
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  3. Yu. N. Osin
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  4. V. I. Nuzhdin
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  5. V. F. Valeev
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  6. K. B. Eidel’man
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  7. N. Yu. Tabachkova
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  8. M. A. Ermakov
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  9. A. L. Stepanov
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Corresponding author

Correspondence to V. V. Vorob’ev.

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Translated by V. Isaakyan

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Vorob’ev, V.V., Rogov, A.M., Osin, Y.N. et al. Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation. Tech. Phys. 64, 195–202 (2019). https://doi.org/10.1134/S1063784219020270

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  • DOI: https://doi.org/10.1134/S1063784219020270

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