Abstract
Application of heat-conducting coatings for cooling of high-power FETs based on heterostructures with arsenide–gallium substrate is theoretically analyzed. When the basic technology for manufacturing of transistors is employed in the absence of additional efforts aimed at a decrease in the thermal resistance of the substrate, the application of an additional thermal interface that represents a heat-conducting dielectric coating makes it possible to substantially decrease the overheating of the transistor channel. A several-fold decrease in such overheating can be reached using variations in the thickness of the coating and modification of the transistor structure and working regimes.
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Translated by A. Chikishev
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Pashkovskii, A.B., Kulikova, I.V., Lapin, V.G. et al. Thermal Surface Interface for High-Power Arsenide–Gallium Heterostructure FETs. Tech. Phys. 64, 220–225 (2019). https://doi.org/10.1134/S1063784219020154
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DOI: https://doi.org/10.1134/S1063784219020154