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SmS/SiC Heterostructure and Its Associated Thermovoltaic Effect

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Abstract

A heterostructure based on single-crystal SiC and a polycrystalline SmS thin film has been studied. In the temperature interval 300–456 K, the thermovoltaic effect has been measured in the structure, the amount of which reaches ~12 mV at 456 K. It has been shown that the amount of this effect correlates with its concentration model developed earlier.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. V. Kaminskii, A. O. Lebedev, S. M. Solov’ev & N. V. Sharenkova

  2. St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia

    A. O. Lebedev

Authors
  1. V. V. Kaminskii
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  2. A. O. Lebedev
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  3. S. M. Solov’ev
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  4. N. V. Sharenkova
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Correspondence to V. V. Kaminskii.

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Translated by V. Isaakyan

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Kaminskii, V.V., Lebedev, A.O., Solov’ev, S.M. et al. SmS/SiC Heterostructure and Its Associated Thermovoltaic Effect. Tech. Phys. 64, 181–182 (2019). https://doi.org/10.1134/S1063784219020075

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  • DOI: https://doi.org/10.1134/S1063784219020075

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