Abstract
The transient process in an RC circuit with a reverse-biased 4H-SiC p+−i−n+ diode serving as a capacitor has been numerically simulated using the SILVACO TCAD software environment. The model experiment has shown that the charge time of an optimally designed 4H-SiC p+−i−n+ capacitor with dopant incomplete ionization is roughly an order of magnitude shorter than in the hypothetical case of complete ionization. The potential effect of the dopant ionization dynamics on the transient process has been found.
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Original Russian Text © P.A. Ivanov, A.S. Potapov, I.V. Grekhov, 2018, published in Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 88, No. 6, pp. 955–958.
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Ivanov, P.A., Potapov, A.S. & Grekhov, I.V. Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode. Tech. Phys. 63, 928–931 (2018). https://doi.org/10.1134/S1063784218060130
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DOI: https://doi.org/10.1134/S1063784218060130