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InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths

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Abstract

Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’ & A. A. Usikova

  2. OOO IoffeLED, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. A. Lavrov & N. M. Stus’

Authors
  1. N. D. Il’inskaya
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  2. S. A. Karandashev
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  3. A. A. Lavrov
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  4. B. A. Matveev
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  5. M. A. Remennyi
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  6. N. M. Stus’
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  7. A. A. Usikova
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Corresponding author

Correspondence to B. A. Matveev.

Additional information

Original Russian Text © N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus’, A.A. Usikova, 2018, published in Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 63, No. 2, pp. 234–237.

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Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A. et al. InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths. Tech. Phys. 63, 226–229 (2018). https://doi.org/10.1134/S1063784218020172

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  • DOI: https://doi.org/10.1134/S1063784218020172

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