Abstract
The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron mobility transistors has been studied. It has been found that thin GaN layers deposited in situ at 550°C do not exhibit polar properties and do not change the carrier concentration in the 2DEG. However, GaN layers deposited at 830°C decrease the carrier concentration in the 2DEG, which is in agreement with theoretical calculations. Using the reflected high-energy electron diffraction technique, it has been established that this effect may be associated with different structures and morphologies of GaN layers deposited at different temperatures.
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Original Russian Text © A.A. Andreev, E.A. Vavilova, I.S. Ezubchenko, M.L. Zanaveskin, I.O. Maiboroda, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 8, pp. 1275–1278.
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Andreev, A.A., Vavilova, E.A., Ezubchenko, I.S. et al. Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure. Tech. Phys. 62, 1288–1291 (2017). https://doi.org/10.1134/S1063784217080035
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DOI: https://doi.org/10.1134/S1063784217080035