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Spin-tunneling magnetoresistive elements based on multilayered nanostructures

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Abstract

The results of studies of characteristics of spin-tunneling magnetoresistive (STMR) elements fabricated from multilayered nanostructures using a mask technique have been considered. The parameters of magnetic annealing of STMR elements have experimentally been obtained. The results of these experiments have shown that a magnitude of the magnetoresistive effect can increase by four to five or more times. The test samples of STMR elements, which have a magnitude of the giant magnetoresistive effect up to 50% and a resistance of 30–35 kΩ, have been studied in the absence of a magnetic field.

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Authors and Affiliations

  1. Innovation and Technology Center of the National Research University of Electronic Technology, Zelenograd, 124498, Russia

    V. V. Amelichev, P. A. Belyakov, D. V. Vasil’ev, D. A. Zhukov, Yu. V. Kazakov, D. V. Kostyuk & E. P. Orlov

  2. Trapeznikov Institute of Control Sciences, Russian Academy of Sciences, Moscow, 117997, Russia

    S. I. Kasatkin

  3. OOO NPK Fotron-Avto, Moscow, 117105, Russia

    A. I. Krikunov

Authors
  1. V. V. Amelichev
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  2. P. A. Belyakov
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  3. D. V. Vasil’ev
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  4. D. A. Zhukov
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  5. Yu. V. Kazakov
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  6. D. V. Kostyuk
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  7. E. P. Orlov
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  8. S. I. Kasatkin
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  9. A. I. Krikunov
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Corresponding author

Correspondence to V. V. Amelichev.

Additional information

Original Russian Text © V.V. Amelichev, P.A. Belyakov, D.V. Vasil’ev, D.A. Zhukov, Yu.V. Kazakov, D.V. Kostyuk, E.P. Orlov, S.I. Kasatkin, A.I. Krikunov, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 8, pp. 1268–1270.

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Amelichev, V.V., Belyakov, P.A., Vasil’ev, D.V. et al. Spin-tunneling magnetoresistive elements based on multilayered nanostructures. Tech. Phys. 62, 1281–1283 (2017). https://doi.org/10.1134/S1063784217080023

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  • DOI: https://doi.org/10.1134/S1063784217080023

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