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Influence of annealing at temperatures above the solidus temperature on the structure and galvanomagnetic properties of Bi92Sb8 solid-solution thin films

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Abstract

The influence of the annealing temperature from the interval between the solidus and liquidus temperatures of Bi92Sb8 solid solution on its structure and galvanomagnetic and thermoelectric properties has been studied. It has been shown that films of bismuth–antimony solid solution grown by thermal evaporation in a vacuum will have a large-grained structure after annealing at temperatures higher than the solidus temperature of the solid solution. It has been found that these films offer the lowest resistivity, the highest relative magnetoresistance, and the highest mobility of charge carriers. As the annealing temperature approaches the liquidus temperature, the probability that a dendritic structure will form and antimony-enriched regions will appear grows. This causes an increase in the charge carrier concentration and a decrease in the resistivity with a decrease in the relative magnetoresistance and charge carrier mobility.

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Authors and Affiliations

  1. Gertsen Russian State Pedagogical University, nab. Moiki 48, St. Petersburg, 191186, Russia

    V. M. Grabov, E. V. Demidov, E. K. Ivanova, V. A. Komarov, N. S. Kablukova, A. N. Krushel’nitskii & M. V. Staritsyn

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  1. V. M. Grabov
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  2. E. V. Demidov
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  3. E. K. Ivanova
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  4. V. A. Komarov
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  5. N. S. Kablukova
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  6. A. N. Krushel’nitskii
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  7. M. V. Staritsyn
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Corresponding author

Correspondence to E. V. Demidov.

Additional information

Original Russian Text © V.M. Grabov, E.V. Demidov, E.K. Ivanova, V.A. Komarov, N.S. Kablukova, A.N. Krushel’nitskii, M.V. Staritsyn, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 7, pp. 1071–1077.

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Grabov, V.M., Demidov, E.V., Ivanova, E.K. et al. Influence of annealing at temperatures above the solidus temperature on the structure and galvanomagnetic properties of Bi92Sb8 solid-solution thin films. Tech. Phys. 62, 1087–1092 (2017). https://doi.org/10.1134/S1063784217070039

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  • DOI: https://doi.org/10.1134/S1063784217070039

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