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Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges

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Abstract

The detection properties of a field-effect transistor with a low Schottky barrier gate in the microwave and terahertz ranges has been studied theoretically. Different detector circuits have been considered. The voltage and current distributions along the channel, the input impedance of the transistor, sensitivity, and noise equivalent power have been found. The influence of the Schottky barrier height on the above characteristics has been analyzed.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Akademicheskaya 7, Afonino, Nizhny Novgorod oblast, 603087, Russia

    S. A. Korolyov, N. V. Vostokov & V. I. Shashkin

  2. Lobachevsky State University, ul. Gagarina 23, Nizhny Novgorod, 603950, Russia

    N. V. Vostokov & V. I. Shashkin

  3. Université Montpellier 2, Montpellier, 34095, France

    N. V. D’yakonova

Authors
  1. S. A. Korolyov
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  2. N. V. Vostokov
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  3. N. V. D’yakonova
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  4. V. I. Shashkin
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Corresponding author

Correspondence to S. A. Korolyov.

Additional information

Original Russian Text © S.A. Korolyov, N.V. Vostokov, N.V. D’yakonova, V.I. Shashkin, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 5, pp. 746–753.

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Korolyov, S.A., Vostokov, N.V., D’yakonova, N.V. et al. Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges. Tech. Phys. 62, 765–772 (2017). https://doi.org/10.1134/S1063784217050139

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  • DOI: https://doi.org/10.1134/S1063784217050139

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