Abstract
The variations in the composition and structure of CoSi2/Si(111) surface layers under Ar+ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi2 surface at low doses D ≤ 1015 cm–2, and a pure Si nanofilm forms at high doses.
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Original Russian Text © Y.S. Ergashov, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 5, pp. 758–761.
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Ergashov, Y.S. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment. Tech. Phys. 62, 777–780 (2017). https://doi.org/10.1134/S1063784217050103
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DOI: https://doi.org/10.1134/S1063784217050103