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Surface and bulk conductivity of vanadium dioxide

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Abstract

The dc and ac resistances of a TR-68 thermistor based on the vanadium dioxide film have been measured and the temperature dependence of the resistance in the semiconductor–metal transition region under adsorption has been studied. The energy band model has been proposed, which explains the anomalous response to adsorption of donor gases by the inversion of the conductivity type of vanadium dioxide surface layers.

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Authors and Affiliations

  1. Voronezh State University of Architecture and Civil Engineering, Voronezh, 394006, Russia

    E. A. Tutov & A. V. Manannikov

  2. College of Engineering, Baghdad, Iraq

    H. I. Al-Khafaji

  3. Moscow State University, Moscow, 119991, Russia

    V. P. Zlomanov

Authors
  1. E. A. Tutov
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  2. A. V. Manannikov
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  3. H. I. Al-Khafaji
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  4. V. P. Zlomanov
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Corresponding author

Correspondence to E. A. Tutov.

Additional information

Original Russian Text © E.A. Tutov, A.V. Manannikov, H.I. Al-Khafaji, V.P. Zlomanov, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 3, pp. 367–371.

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Tutov, E.A., Manannikov, A.V., Al-Khafaji, H.I. et al. Surface and bulk conductivity of vanadium dioxide. Tech. Phys. 62, 390–394 (2017). https://doi.org/10.1134/S1063784217030252

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  • DOI: https://doi.org/10.1134/S1063784217030252

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