Abstract
Conditions for the surface processing of a cap GaN layer in AlGaN/GaN high-electron-mobility transistor (HEMT) structures in a BCl3 plasma have been found. They make it possible to considerably reduce the resistance of ohmic contacts to Group III nitride-based field-effect transistors. The primary factor behind this effect is the noticeable lowering of a potential barrier on the GaN surface through the formation of nitrogen vacancies that act as donors and, correspondingly, a rise in the surface concentration of electrons.
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Original Russian Text © N.A. Andrianov, A.A. Kobelev, A.S. Smirnov, Yu.V. Barsukov, Yu.M. Zhukov, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 3, pp. 413–418.
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Andrianov, N.A., Kobelev, A.A., Smirnov, A.S. et al. Influence of surface processing in a BCl3 plasma on the formation of ohmic contacts to AlGaN/GaN structures. Tech. Phys. 62, 436–440 (2017). https://doi.org/10.1134/S1063784217030033
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DOI: https://doi.org/10.1134/S1063784217030033