Abstract
The influence of Ar+ bombardment on the composition and the structure of the SiO2/Si surface is studied. A thin Si film is found to form on the SiO2 surface subjected to high-dose ion bombardment.
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Original Russian Text © M.B. Yusupjanova, D.A. Tashmukhamedova, B.E. Umirzakov, 2016, published in Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 86, No. 4, pp. 148–150.
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Yusupjanova, M.B., Tashmukhamedova, D.A. & Umirzakov, B.E. Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment. Tech. Phys. 61, 628–630 (2016). https://doi.org/10.1134/S1063784216040253
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DOI: https://doi.org/10.1134/S1063784216040253