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Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal–oxide–semiconductor structures under the action of heavy charged particles and a pulsed voltage

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Abstract

Regularities in the breakdown of thin SiO2 oxide films in metal–oxide–semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the SiO2 breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range.

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Authors and Affiliations

  1. Research Institute of Scientific Instruments, State Nuclear Energy Corporation Rosatom, Promzona Tutaevo 8, Lytkarino, Moscow oblast, 140080, Russia

    V. F. Zinchenko, K. V. Lavrent’ev, V. V. Emel’yanov & A. S. Vatuev

Authors
  1. V. F. Zinchenko
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  2. K. V. Lavrent’ev
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  3. V. V. Emel’yanov
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  4. A. S. Vatuev
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Corresponding author

Correspondence to V. F. Zinchenko.

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Original Russian Text © V.F. Zinchenko, K.V. Lavrent’ev, V.V. Emel’yanov, A.S. Vatuev, 2016, published in Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 61, No. 2, pp. 30–36.

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Zinchenko, V.F., Lavrent’ev, K.V., Emel’yanov, V.V. et al. Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal–oxide–semiconductor structures under the action of heavy charged particles and a pulsed voltage. Tech. Phys. 61, 187–193 (2016). https://doi.org/10.1134/S1063784216020286

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  • DOI: https://doi.org/10.1134/S1063784216020286

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