Abstract
The problem of the distribution of potential and surface charge density in a thin layer containing a quasi-two-dimensional p–n junction is reduced to the solution of an integral equation. Numerical solution of such an equation is obtained for an asymmetric 2D p–n junction in the strong degeneracy and quasi-equilibrium conditions. The boundary conditions on the lines of intersection of the Fermi level and the thresholds of size-quantization subbands are used. The dependence of the width of the depletion region on the impurity concentration and bias voltage is analyzed.
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Original Russian Text © Yu.G. Peisakhovich, A.A. Shtygashev, L.A. Borynyak, N.Yu. Petrov, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 10, pp. 80–86.
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Peisakhovich, Y.G., Shtygashev, A.A., Borynyak, L.A. et al. Electric field and charge density in the plane of a quasi-equilibrium asymmetric 2D p–n junction with zero current. Tech. Phys. 60, 1494–1500 (2015). https://doi.org/10.1134/S1063784215100254
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DOI: https://doi.org/10.1134/S1063784215100254