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Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

  • Physics of Nanostructures
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Abstract

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi2(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi2 islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi2 films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi2 films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi2 film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi2(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi2(111)2 × 2 interface.

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Authors and Affiliations

  1. Institute of Automation and Control Processes, Far East Branch, Russian Academy of Sciences, ul. Radio 5, Vladivostok, 690041, Russia

    A. A. Alekseev, D. A. Olyanich, T. V. Utas, V. G. Kotlyar, A. V. Zotov & A. A. Saranin

  2. School of Natural Sciences, Far East Federal University, ul. Sukhanova 8, Vladivostok, 690950, Russia

    D. A. Olyanich, V. G. Kotlyar, A. V. Zotov & A. A. Saranin

  3. Vladivostok State University of Economics and Service, ul. Gogolya 41, Vladivostok, 690600, Russia

    A. V. Zotov

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  1. A. A. Alekseev
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  2. D. A. Olyanich
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  3. T. V. Utas
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  4. V. G. Kotlyar
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  6. A. A. Saranin
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Correspondence to V. G. Kotlyar.

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Original Russian Text © A.A. Alekseev, D.A. Olyanich, T.V. Utas, V.G. Kotlyar, A.V. Zotov, A.A. Saranin, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 10, pp. 94–100.

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Alekseev, A.A., Olyanich, D.A., Utas, T.V. et al. Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature. Tech. Phys. 60, 1508–1514 (2015). https://doi.org/10.1134/S1063784215100023

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