Abstract
We report on the results of numerical simulation of the effect of electric field redistribution in the insulating gap of the open TiN–SiO2–W metal–insulator–metal “sandwich” structure upon the formation of an insulating film layer with an elevated permittivity at the free end as a result of absorption of moisture by the porous silicon dioxide obtained by plasmachemical deposition. It is shown that the effect of electric field redistribution can explain all experimentally observed changes in the electric parameters caused by the action of moisture.
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Original Russian Text © V.M. Mordvintsev, V.L. Levin, S.E. Kudryavtsev, L.A. Tsvetkova, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 9, pp. 120–127.
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Mordvintsev, V.M., Levin, V.L., Kudryavtsev, S.E. et al. Role of the effect of electric field redistribution in the variation of the characteristics of open metal—insulator—metal “sandwich” structures under the action of moisture. Tech. Phys. 60, 1376–1383 (2015). https://doi.org/10.1134/S1063784215090133
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DOI: https://doi.org/10.1134/S1063784215090133