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Technical Physics

, Volume 60, Issue 7, pp 1056–1062 | Cite as

Morphology simulation of the surface subjected to low-energy ion sputtering

  • A. S. ShumilovEmail author
  • I. I. Amirov
Electron and Ion Beams, Accelerators
  • 40 Downloads

Abstract

A new 2D method of simulating the morphology of a surface subjected to low-energy ion sputtering with regard to sputtered material redeposition is suggested. The object of simulation is the profile of microgrooves arising on the silicon surface exposed to slow argon ions from the dense plasma of an rf induction discharge. Numerical simulation data and experimental data are in good agreement.

Keywords

Deep Groof Diffusion Algorithm Plasma Sputtering Numerical Simulation Data Atom Yield 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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