Abstract
The implantation of the O +2 ions at low energies of E 0 ≤ 2–3 keV and high doses of D ≥ 1016 cm−2 leads to significant variations in the composition and amorphization of the TiN surface layer. The postimplantation annealing at a temperature of T ≈ 950–1000 K over 30 min results in the formation of a polycrystalline film with approximate composition TiN0.6O0.4. Based on the analysis of photoelectron spectra, we assume that the TiN and TiN0.6O0.4 films represent degenerate narrow-band-gap n-type semiconductors.
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References
B. S. Danilin, Application of Low-Temperature Plasma for Thin-Film Deposition (Energoatomizdat, Moscow, 1989).
E. N. Reshetnyak and V. E. Strel’nitskii, Vopr. At. Nauki Tekh., Ser.: Fiz. Rad. Povrezhd. Rad. Materialoved., No. 2, 119 (2008).
F. V. Kiryukhantsev-Korneev, A. N. Sheveiko, E. A. Levashov, and D. V. Shtanskii, Vopr. Materialoved., No. 2(54), 187 (2008).
D. Loktev and E. Yamashkin, Nanoindustriya, No. 5, 24 (2007).
V. V. Pinaev and V. I. Shapovalov, Izv. St. Petersb. Gos. Elektrotekh. Univ., No. 10, 11 (2008).
N. Blasco and Ch. Dussarrat, “Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing,” US Patent No. 8399056.
E. A. Levashov and D. V. Shtanskii, Inform. Innovatsii, No. 1, 63 (2007).
N. Huang, P. Yang, Y. X. Leng, et al., Biomaterials, No. 24, 2177 (2003).
Z. Lin, I. S. Lee, Y. J. Choi, et al., Biomed. Mater., No. 4, 110004 (2009).
M. K. Boichenko, E. V. Bulygina, Yu. A. Bykov, et al., in Proceedings of the Scientific Assembly, Kharkiv, 2003, pp. 144–147.
N. A. Pan’kin and N. A. Smolanov, in Proceedings of the 17th International Conference on Ion-Surface Interaction (ISI-2005, Zvenigorod, 2005), Vol. 2, pp. 395–397.
A. V. Belyi, Poverkhnost: Fiz. Khim. Mekh., No. 10, 128 (1989).
L. I. Tushinskii and A. B. Plokhov, Structure and Physicomechanical Properties of Coatings (Nauka, Novosibirsk, 1986).
V. V. Uglov, Zh. L. Prikhod’ko, V. V. Khodasevich, et al., Fiz. Khim. Obrab. Mater., No. 5, 48 (2003).
A. A. Aliev, Z. A. Isakhanov, Z. E. Mukhtarov, and M. K. Ruzibaeva, Tech. Phys. 55, 111 (2010).
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Original Russian Text © Z.A. Isakhanov, Yu.E. Umirzakov, M.K. Ruzibaeva, S.B. Donaev, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 2, pp. 156–158.
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Isakhanov, Z.A., Umirzakov, Y.E., Ruzibaeva, M.K. et al. Effect of the O +2 -ion bombardment on the TiN composition and structure. Tech. Phys. 60, 313–315 (2015). https://doi.org/10.1134/S1063784215020097
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DOI: https://doi.org/10.1134/S1063784215020097