Abstract
The spectra of thermostimulated conductivity are studied in wide temperature and electric voltage ranges (100–400 K and 5–300 V, respectively) for single crystals of AgGaSe2 ternary compound. Using the thermal cleaning method, two levels with an activation energy of 0.11 eV are found in the energy gap. The behavior of these levels with the same activation energies in different crystals allows us to conclude that these levels are characteristic of this compound and result from repeated trapping.
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Original Russian Text © F.I. Mamedov, S.M. Zarbalieva, E.K. Gurbanova, 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 12, pp. 149–151.
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Mamedov, F.I., Zarbalieva, S.M. & Gurbanova, E.K. Determination of trapping levels in AgGaSe2 single crystals by the thermal cleaning method. Tech. Phys. 59, 1885–1887 (2014). https://doi.org/10.1134/S1063784214120184
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DOI: https://doi.org/10.1134/S1063784214120184