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Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

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Abstract

The photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures are studied. It is shown that, at low temperatures, the high-ohmic base region of the HMS-Si〈Mn〉-HMS or HMS-Si〈Mn〉-M structures irradiated by intrinsic light becomes a low-ohmic conducting layer in the transition i-type region of the structures. The mechanism of amplification of the photoconduction in the heterostructures that is caused by collisional ionization in the i-type region is revealed. The sharp quenching of the photoconduction in the temperature range 180–220 K is explained.

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Authors and Affiliations

  1. Beruni State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Uzbekistan

    T. S. Kamilov & I. V. Ernst

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. Yu. Samunin

Authors
  1. T. S. Kamilov
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  2. I. V. Ernst
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  3. A. Yu. Samunin
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Correspondence to T. S. Kamilov.

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Original Russian Text © T.S. Kamilov, I.V. Ernst, A.Yu. Samunin, 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 12, pp. 96–101.

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Kamilov, T.S., Ernst, I.V. & Samunin, A.Y. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures. Tech. Phys. 59, 1833–1838 (2014). https://doi.org/10.1134/S106378421412010X

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  • DOI: https://doi.org/10.1134/S106378421412010X

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