Abstract
X-ray topography and high-resolution diffractometry methods are used for testing GaAs wafers from different manufacturers, which are used as substrates for epitaxial growth in construction of power semiconductor devices. Typical features of such wafers are a distorted surface layer, bent, and growth dislocations with two types of distribution with a density of (1–2) × 104 cm−2. The best and worse substrates are determined from the finishing of the working surface, and the optimal combination of X-ray methods for estimating the quality of finishing of the working surface of the crystals with a high level of X-ray absorption is established.
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Original Russian Text © I.L. Shul’pina, V.V. Ratnikov, V.A. Kozlov, F.Yu. Soldatenkov, V.E. Voitovich, 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 10, pp. 149–152.
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Shul’pina, I.L., Ratnikov, V.V., Kozlov, V.A. et al. Estimation of quality of GaAs substrates used for constructing semiconductor power devices. Tech. Phys. 59, 1566–1569 (2014). https://doi.org/10.1134/S1063784214100296
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DOI: https://doi.org/10.1134/S1063784214100296