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Technical Physics

, Volume 59, Issue 8, pp 1171–1179 | Cite as

Effect of the doping level on temperature bistability in a silicon wafer

  • V. V. OvcharovEmail author
  • V. I. Rudakov
  • V. P. Prigara
  • A. L. Kurenya
Physical Science of Materials

Abstract

The influence of the doping level on the effect of the temperature bistability in a silicon wafer upon radiative heat transfer between the wafer and the elements of the heating system is studied. Theoretical transfer characteristics are constructed for a silicon wafer doped with donor and acceptor impurities. These characteristics are compared with the transfer characteristics obtained during heating and cooling of wafers with the hole conduction (with dopant concentrations of 1015, 2 × 1016, and 3 × 1017 cm−3) and electron conduction (with impurity concentrations of 1015 and 8 × 1018 cm−3) in a thermal reactor of the rapid thermal annealing setup. It is found that the width and height of the hysteresis loop decrease with increasing dopant concentration and are almost independent of the type of conduction of the silicon wafer. The critical value of the impurity concentration of both types is 1.4 × 1017 cm−3. For this concentration, the loop width vanishes, and the height corresponds to the minimal value of the temperature jump (∼200 K). The mechanism of temperature bistability in the silicon wafer upon radiative heat transfer is discussed.

Keywords

Heat Transfer Coefficient Hysteresis Loop Silicon Wafer Doping Level Heat Removal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    H. Gibbs, Optical Bistability and Hysteresis in Distributed Nonlinear. Systems: Controlling Light with Light (Academic, New York, 1985).Google Scholar
  2. 2.
    N. N. Rozanov, Optical Bistability and Hysteresis in Distributed Nonlinear Systems (Nauka, Moscow, 1997).Google Scholar
  3. 3.
    V. I. Rudakov, V. V. Ovcharov, and V. P. Prigara, Tech. Phys. Lett. 34, 718 (2008).ADSGoogle Scholar
  4. 4.
    V. I. Rudakov, V. V. Ovcharov, A. L. Kurenya, and V. P. Prigara, Microelectron. Eng. 93, 67 (2012).CrossRefGoogle Scholar
  5. 5.
    V. P. Prigara, V. V. Ovcharov, A. L. Kurenya, and V. I. Rudakov, in Proceedings of the 8th International Conference and 7th School of Young Scientists and Specialists, Moscow, 2011, p. 114.Google Scholar
  6. 6.
    J.-M. Dilhac and C. Ganibal, Rapid Thermal and Other Shorttime Processing Technologies, Electrochem. Soc. Proc. Ser. (Penington, NJ, 2000), Vol. 2000-9, p. 421.Google Scholar
  7. 7.
    B. V. Mochalov and V. I. Rudakov, Prib. Tekh. Eksp., No. 2, 155 (1996).Google Scholar
  8. 8.
    R. Zigel and J. Howell, Thermal Radiation Heat Transfer (CRC, Boca Raton, 2011).Google Scholar
  9. 9.
    J. Zeegers and H. A. L. van Dijk, Sol. Energy Mater. Sol. Cells 33, 23 (1994).CrossRefGoogle Scholar
  10. 10.
  11. 11.
    B. J. Lee and Z. M. Zhang, in Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, Santa Barbara, 2005, p. 7.Google Scholar
  12. 12.
    B. J. Lee and Z. M. Zhang, in Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, Santa Barbara, 2005, p. 10.Google Scholar
  13. 13.
    V. Joshi, et al., in Proceedings of the Asia and South Pacific Design Automation Conference, Taipei, Taiwan, 2010, pp. 739–744.Google Scholar
  14. 14.
    F. Cacho, et al., IEEE Trans. Semicond. Manuf. 23, 303 (2011).CrossRefGoogle Scholar
  15. 15.
    E. M. Epshtein, Izv. Vyssh. Uchebn. Zaved., Radiofiz. 15, 33 (1972).Google Scholar
  16. 16.
    A. N. Magunov, Laser Thermometry of Solids, 2nd ed. (Cambridge Int. Sci. Publ., Cambridge, 2006).Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • V. V. Ovcharov
    • 1
    Email author
  • V. I. Rudakov
    • 1
  • V. P. Prigara
    • 1
  • A. L. Kurenya
    • 1
  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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