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Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing


The W(150 nm)/HfO2(5 nm)/Si(100) structures prepared in a single vacuum cycle by rf magnetron sputtering were subjected to rapid thermal annealing in argon. It is found that at an annealing temperature of 950°C, the tungsten oxide WO x phase and the hafnium silicate HfSi x O y phase grow at the W/HfO2 and HfO2/Si(100) interfaces, respectively. Herewith, the total thickness of the oxide layeris 30% larger than that of the initial HfO2 film. In addition, a decrease in the specific capacitance in accumulation C max and in the dielectric constant k (from 27 to 23) is observed. At an annealing temperature of 980°C, intensive interaction between tungsten and HfO2 takes place, causing the formation of a compositionally inhomogeneous Hf x Si y W z O oxide layer and further decrease in C max. It is shown that a considerable reduction in the leakage currents occurs in the W/HfO2/X/Si(100) structures, where X is a nitride barrier layer.

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Correspondence to E. A. Bogoyavlenskaya.

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Original Russian Text © E.A. Bogoyavlenskaya, V.I. Rudakov, Yu.I. Denisenko, V.V. Naumov, A.E. Rogozhin, 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 5, pp. 82–87.

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Bogoyavlenskaya, E.A., Rudakov, V.I., Denisenko, Y.I. et al. Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing. Tech. Phys. 59, 711–715 (2014).

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  • Versus Characteristic
  • Rapid Thermal Annealing
  • Tungsten Oxide
  • Gate Structure
  • Maximal Specific Capacitance