Technical Physics

, Volume 59, Issue 5, pp 711–715 | Cite as

Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

  • E. A. BogoyavlenskayaEmail author
  • V. I. Rudakov
  • Yu. I. Denisenko
  • V. V. Naumov
  • A. E. Rogozhin
Physics of Nanostructures


The W(150 nm)/HfO2(5 nm)/Si(100) structures prepared in a single vacuum cycle by rf magnetron sputtering were subjected to rapid thermal annealing in argon. It is found that at an annealing temperature of 950°C, the tungsten oxide WO x phase and the hafnium silicate HfSi x O y phase grow at the W/HfO2 and HfO2/Si(100) interfaces, respectively. Herewith, the total thickness of the oxide layeris 30% larger than that of the initial HfO2 film. In addition, a decrease in the specific capacitance in accumulation C max and in the dielectric constant k (from 27 to 23) is observed. At an annealing temperature of 980°C, intensive interaction between tungsten and HfO2 takes place, causing the formation of a compositionally inhomogeneous Hf x Si y W z O oxide layer and further decrease in C max. It is shown that a considerable reduction in the leakage currents occurs in the W/HfO2/X/Si(100) structures, where X is a nitride barrier layer.


Versus Characteristic Rapid Thermal Annealing Tungsten Oxide Gate Structure Maximal Specific Capacitance 
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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • E. A. Bogoyavlenskaya
    • 1
    Email author
  • V. I. Rudakov
    • 1
  • Yu. I. Denisenko
    • 1
  • V. V. Naumov
    • 1
  • A. E. Rogozhin
    • 2
  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia
  2. 2.Institute of Physics and TechnologyRussian Academy of SciencesMoscowRussia

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