Abstract
It is shown that layered InSe, GaSe, and Bi2Te3 semiconductors are promising for sensitive elements of pressure transducers. Two ways for measuring pressure with layered crystals are suggested: from the pressure dependence of the intercalation parameter (current) and from the pressure dependence of the intercalate electromotive force.
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Original Russian Text © Z.R. Kudrynskyi, Z.D. Kovalyuk, 2013, published in Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 83, No. 12, pp. 137–140.
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Kudrynskyi, Z.R., Kovalyuk, Z.D. Sensitive elements of pressure transducers made of layered intercalated InSe, GaSe, and Bi2Te3 crystals. Tech. Phys. 58, 1840–1843 (2013). https://doi.org/10.1134/S106378421312013X
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DOI: https://doi.org/10.1134/S106378421312013X