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Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

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Abstract

The energy band diagram of multilayer nanofilm systems formed on the basis of Si, GaAs, and CaF2 is constructed. The optimal regimes of obtaining homogeneous films of a complex composition are determined.

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Authors and Affiliations

  1. Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, Akademgorodok, Tashkent, 100125, Uzbekistan

    B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev & B. B. Mavlyanov

Authors
  1. B. E. Umirzakov
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  2. D. A. Tashmukhamedova
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  3. M. K. Ruzibaeva
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  4. A. K. Tashatov
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  5. S. B. Donaev
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  6. B. B. Mavlyanov
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Corresponding author

Correspondence to M. K. Ruzibaeva.

Additional information

Original Russian Text © B.E. Umirzakov, D.A. Tashmukhamedova, M.K. Ruzibaeva, A.K. Tashatov, S.B. Donaev, B.B. Mavlyanov, 2013, published in Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 83, No. 9, pp. 146–149.

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Umirzakov, B.E., Tashmukhamedova, D.A., Ruzibaeva, M.K. et al. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods. Tech. Phys. 58, 1383–1386 (2013). https://doi.org/10.1134/S1063784213090260

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  • DOI: https://doi.org/10.1134/S1063784213090260

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