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Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

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Abstract

A review of the experimental results on the study of the Si, GaAs, and CaF2 surface layers that are created using the low-energy ion implantation is presented. Optical and electron spectroscopy and microscopy are employed in the experiments.

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Authors and Affiliations

  1. Tashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan

    B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov & Kh. Kh. Boltaev

Authors
  1. B. E. Umirzakov
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  2. D. A. Tashmukhamedova
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  3. D. M. Muradkabilov
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  4. Kh. Kh. Boltaev
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Corresponding author

Correspondence to B. E. Umirzakov.

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Original Russian Text © B.E. Umirzakov, D.A. Tashmukhamedova, D.M. Muradkabilov, Kh.Kh. Boltaev, 2013, published in Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 83, No. 6, pp. 66–70.

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Umirzakov, B.E., Tashmukhamedova, D.A., Muradkabilov, D.M. et al. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation. Tech. Phys. 58, 841–844 (2013). https://doi.org/10.1134/S1063784213060261

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  • DOI: https://doi.org/10.1134/S1063784213060261

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